IPI65R190C6XKSA1
Part NoIPI65R190C6XKSA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 20.2A TO262-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C20.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 7.3A, 10V
RdsOn(Max)@Id3.5V @ 730µA
Vgs73 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1620 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature151W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO262-3
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6146
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.15 | |
| 10 | 3.087 | |
| 100 | 2.9925 | |
| 1000 | 2.898 | |
| 10000 | 2.772 |
Associated Product
