![IPL65R650C6SATMA1](/media/Discrete%20Semiconductor%20Products/Transistors/488%253bMKT-PQFN08T%253b%253b8.jpg)
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IPL65R650C6SATMA1
Part NoIPL65R650C6SATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 650V 6.7A THIN-PAK
Datasheet
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Specification
PackageTape & Reel (TR)
SeriesCoolMOS™ C6
ProductStatusLast Time Buy
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C6.7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)650mOhm @ 2.1A, 10V
RdsOn(Max)@Id3.5V @ 210µA
Vgs21 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)440 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature56.8W (Tc)
PowerDissipation(Max)-40°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePG-TSON-8-2
SupplierDevicePackage8-PowerTDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5490
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.8352 | |
10 | 0.8185 | |
100 | 0.7934 | |
1000 | 0.7684 | |
10000 | 0.735 |