IPU60R1K4C6
Part NoIPU60R1K4C6
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesCoolMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C3.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 1.1A, 10V
RdsOn(Max)@Id3.5V @ 90µA
Vgs9.4 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)200 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature28.4W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CasePG-TO-251-3-341
GateCharge(Qg)(Max)@VgsTO-251-3 Short Leads, IPak, TO-251AA
Grade
Qualification
In Stock:
18694
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.306 | |
| 10 | 0.2999 | |
| 100 | 0.2907 | |
| 1000 | 0.2815 | |
| 10000 | 0.2693 |
Associated Product
