IRFU9014N

Part NoIRFU9014N

ManufacturerInfineon

DescriptionMOSFET P-CH 60V 5.1A I-PAK

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Specification

Vgs(th) (Max) @ Id4V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageIPAK (TO-251)

SeriesHEXFET®

Rds On (Max) @ Id, Vgs500 mOhm @ 3.1A, 10V

Power Dissipation (Max)2.5W (Ta), 25W (Tc)

PackagingTube

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusContains lead / RoHS non-compliant

Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V

Gate Charge (Qg) (Max) @ Vgs12nC @ 10V

FET TypeP-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)60V

Detailed DescriptionP-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Through Hole IPAK (TO-251)

Current - Continuous Drain (Id) @ 25°C5.1A (Tc)

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