IRFZ34NS

Part NoIRFZ34NS

ManufacturerInfineon

DescriptionMOSFET N-CH 55V 29A D2PAK

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Specification

Vgs(th) (Max) @ Id4V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageD2PAK

SeriesHEXFET®

Rds On (Max) @ Id, Vgs40 mOhm @ 16A, 10V

Power Dissipation (Max)3.8W (Ta), 68W (Tc)

PackagingTube

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Other Names*IRFZ34NS

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusContains lead / RoHS non-compliant

Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs34nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)55V

Detailed DescriptionN-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Current - Continuous Drain (Id) @ 25°C29A (Tc)

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