SI4435DY

Part NoSI4435DY

ManufacturerInfineon

DescriptionMOSFET P-CH 30V 8A 8-SOIC

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Specification

Vgs(th) (Max) @ Id1V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package8-SO

SeriesHEXFET®

Rds On (Max) @ Id, Vgs20 mOhm @ 8A, 10V

Power Dissipation (Max)2.5W (Ta)

PackagingTube

Package / Case8-SOIC (0.154", 3.90mm Width)

Other Names*SI4435DY

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusContains lead / RoHS non-compliant

Input Capacitance (Ciss) (Max) @ Vds2320pF @ 15V

Gate Charge (Qg) (Max) @ Vgs60nC @ 10V

FET TypeP-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Drain to Source Voltage (Vdss)30V

Detailed DescriptionP-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO

Current - Continuous Drain (Id) @ 25°C8A (Tc)

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