IRF60B217
Part NoIRF60B217
ManufacturerInternational Rectifier
DescriptionTRENCH 40<-<100V
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesHEXFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)9mOhm @ 36A, 10V
RdsOn(Max)@Id3.7V @ 50µA
Vgs66 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2230 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature83W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO220-3-1
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10064
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.68 | |
| 10 | 1.6464 | |
| 100 | 1.596 | |
| 1000 | 1.5456 | |
| 10000 | 1.4784 |
Associated Product
