IRFAC30
Part NoIRFAC30
ManufacturerInternational Rectifier
DescriptionN-CHANNEL HERMETIC MOS HEXFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesHEXFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C3.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 3.6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs38 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)630 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-204AA (TO-3)
SupplierDevicePackageTO-204AA, TO-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2560
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.559 | |
| 10 | 5.4478 | |
| 100 | 5.281 | |
| 1000 | 5.1143 | |
| 10000 | 4.8919 |
Associated Product
