![IRG8P08N120KD-EPBF](/media/Discrete%20Semiconductor%20Products/Transistors/MFG_IFEINFAIGW50N65F5XKSA1.jpg)
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IRG8P08N120KD-EPBF
Part NoIRG8P08N120KD-EPBF
ManufacturerInternational Rectifier
DescriptionIRG8P08N120 - DISCRETE IGBT WITH
Datasheet
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Specification
PackageBulk
Series-
ProductStatusObsolete
IGBTType-
Voltage-CollectorEmitterBreakdown(Max)1200 V
Current-Collector(Ic)(Max)15 A
Vce(on)(Max)@Vge15 A
Ic2V @ 15V, 5A
Power-Max89 W
SwitchingEnergy300µJ (on), 300µJ (off)
InputTypeStandard
GateCharge45 nC
Td(on/off)@25°C20ns/160ns
TestCondition600V, 5A, 47Ohm, 15V
OperatingTemperature50 ns
Grade-40°C ~ 150°C (TJ)
QualificationThrough Hole
MountingTypeTO-247-3
Package/CaseTO-247AD
SupplierDevicePackage-
Current-CollectorPulsed(Icm)-
ReverseRecoveryTime(trr)
In Stock:
4729
available for immediate sale in a store
available for immediate sale in a store
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