R6011ENX

Part NoR6011ENX

ManufacturerLAPIS Semiconductor

DescriptionMOSFET N-CH 600V 11A TO220

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Specification

Vgs(th) (Max) @ Id4V @ 1mA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageTO-220FM

Series-

Rds On (Max) @ Id, Vgs390 mOhm @ 3.8A, 10V

Power Dissipation (Max)40W (Tc)

PackagingBulk

Package / CaseTO-220-3 Full Pack

Other NamesR6011ENXCT R6011ENXCT-ND

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Manufacturer Standard Lead Time17 Weeks

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V

Gate Charge (Qg) (Max) @ Vgs32nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)600V

Detailed DescriptionN-Channel 600V 11A (Tc) 40W (Tc) Through Hole TO-220FM

Current - Continuous Drain (Id) @ 25°C11A (Tc)

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