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RF08L6STE25
Part NoRF08L6STE25
ManufacturerLAPIS Semiconductor
DescriptionDIODE GEN PURP 600V 800MA PMDS
Datasheet
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Specification
Voltage - Forward (Vf) (Max) @ If1.3V @ 800mA
Voltage - DC Reverse (Vr) (Max)600V
Supplier Device PackagePMDS
SpeedFast Recovery = 200mA (Io)
Series-
Reverse Recovery Time (trr)70ns
PackagingTape & Reel (TR)
Package / CaseDO-214AC, SMA
Other NamesRF08L6STE25TR
Operating Temperature - Junction150°C (Max)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Diode TypeStandard
Detailed DescriptionDiode Standard 600V 800mA Surface Mount PMDS
Current - Reverse Leakage @ Vr10µA @ 600V
Current - Average Rectified (Io)800mA
Capacitance @ Vr, F-
Base Part NumberRF08L6S
In Stock:
15952
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.5661 | |
10 | 0.5548 | |
100 | 0.5378 | |
1000 | 0.5208 | |
10000 | 0.4982 |