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1N5809URS
Part No1N5809URS
ManufacturerMicrochip Technology
DescriptionDIODE GP 100V 3A SQ-MELF B
Datasheet
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Specification
PackageBulk
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)100 V
Current-AverageRectified(Io)3A
Voltage-Forward(Vf)(Max)@IfFast Recovery =< 500ns, > 200mA (Io)
Speed60pF @ 10V, 1MHz
ReverseRecoveryTime(trr)-65°C ~ 175°C
Current-ReverseLeakage@VrSurface Mount
Capacitance@VrSQ-MELF, B
FB, SQ-MELF
MountingType5 µA @ 100 V
Package/Case875 mV @ 4 A
SupplierDevicePackage30 ns
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
4683
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 29.0178 | |
10 | 28.4374 | |
100 | 27.5669 | |
1000 | 26.6964 | |
10000 | 25.5357 |