2N2779
Part No2N2779
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypePNP
Current-Collector(Ic)(Max)30 A
Voltage-CollectorEmitterBreakdown(Max)250 V
VceSaturation(Max)@Ib-
Ic-
Current-CollectorCutoff(Max)-
DCCurrentGain(hFE)(Min)@Ic200 W
Vce-
Power-Max-65°C ~ 200°C (TJ)
Frequency-TransitionStud Mount
OperatingTemperatureTO-211MB, TO-63-4, Stud
MountingTypeTO-63
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock:
22115
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 463.6206 | |
| 10 | 454.3482 | |
| 100 | 440.4396 | |
| 1000 | 426.531 | |
| 10000 | 407.9861 |
Associated Product
