2N3506L
Part No2N3506L
ManufacturerMicrochip Technology
DescriptionNPN POWER SILICON TRANSISTORS
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypeNPN
Current-Collector(Ic)(Max)3 A
Voltage-CollectorEmitterBreakdown(Max)40 V
VceSaturation(Max)@Ib1.5V @ 250mA, 2.5A
Ic1µA
Current-CollectorCutoff(Max)50 @ 500mA, 1V
DCCurrentGain(hFE)(Min)@Ic1 W
Vce-
Power-Max-65°C ~ 200°C (TJ)
Frequency-TransitionThrough Hole
OperatingTemperatureTO-205AA, TO-5-3 Metal Can
MountingTypeTO-5AA
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock:
2604
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.8293 | |
| 10 | 12.5727 | |
| 100 | 12.1878 | |
| 1000 | 11.803 | |
| 10000 | 11.2898 |
Associated Product
