2N5312
Part No2N5312
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypePNP
Current-Collector(Ic)(Max)5 A
Voltage-CollectorEmitterBreakdown(Max)80 V
VceSaturation(Max)@Ib-
Ic-
Current-CollectorCutoff(Max)-
DCCurrentGain(hFE)(Min)@Ic87 W
Vce-
Power-Max-65°C ~ 200°C (TJ)
Frequency-Transition-
OperatingTemperature-
MountingTypeStud Mount
Package/CaseTO-211MA, TO-210AC, TO-61-4, Stud
SupplierDevicePackageTO-61
Grade
Qualification
In Stock:
3052
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 503.8656 | |
| 10 | 493.7883 | |
| 100 | 478.6723 | |
| 1000 | 463.5564 | |
| 10000 | 443.4017 |
Associated Product
