2N6211P
Part No2N6211P
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypePNP
Current-Collector(Ic)(Max)2 A
Voltage-CollectorEmitterBreakdown(Max)225 V
VceSaturation(Max)@Ib1.4V @ 125mA, 1A
Ic5mA
Current-CollectorCutoff(Max)30 @ 1A, 5V
DCCurrentGain(hFE)(Min)@Ic3 W
Vce-
Power-Max-55°C ~ 200°C
Frequency-TransitionThrough Hole
OperatingTemperatureTO-213AA, TO-66-2
MountingTypeTO-66 (TO-213AA)
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock:
8600
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 35.4814 | |
| 10 | 34.7718 | |
| 100 | 33.7073 | |
| 1000 | 32.6429 | |
| 10000 | 31.2236 |
Associated Product
