2N6322
Part No2N6322
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypeNPN
Current-Collector(Ic)(Max)30 A
Voltage-CollectorEmitterBreakdown(Max)200 V
VceSaturation(Max)@Ib-
Ic-
Current-CollectorCutoff(Max)-
DCCurrentGain(hFE)(Min)@Ic350 W
Vce-
Power-Max-65°C ~ 200°C (TJ)
Frequency-TransitionThrough Hole
OperatingTemperatureTO-204AA, TO-3
MountingTypeTO-204AD (TO-3)
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock:
2928
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 321.2167 | |
| 10 | 314.7924 | |
| 100 | 305.1559 | |
| 1000 | 295.5194 | |
| 10000 | 282.6707 |
Associated Product
