2N656S
Part No2N656S
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypeNPN
Current-Collector(Ic)(Max)12 A
Voltage-CollectorEmitterBreakdown(Max)60 V
VceSaturation(Max)@Ib-
Ic-
Current-CollectorCutoff(Max)-
DCCurrentGain(hFE)(Min)@Ic-
Vce-
Power-Max-65°C ~ 200°C (TJ)
Frequency-TransitionThrough Hole
OperatingTemperatureTO-205AA, TO-5-3 Metal Can
MountingTypeTO-5AA
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock:
3279
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 40.9617 | |
| 10 | 40.1425 | |
| 100 | 38.9136 | |
| 1000 | 37.6848 | |
| 10000 | 36.0463 |
Associated Product
