APTM120H29FG
Part NoAPTM120H29FG
ManufacturerMicrochip Technology
DescriptionMOSFET 4N-CH 1200V 34A SP6
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPOWER MOS 7®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration4 N-Channel (Full Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C34A
RdsOn(Max)@Id348mOhm @ 17A, 10V
Vgs5V @ 5mA
Vgs(th)(Max)@Id374nC @ 10V
GateCharge(Qg)(Max)@Vgs10300pF @ 25V
InputCapacitance(Ciss)(Max)@Vds780W
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP6
Package/CaseSP6
SupplierDevicePackage
Grade
Qualification
In Stock:
5351
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 452.984 | |
| 10 | 443.9243 | |
| 100 | 430.3348 | |
| 1000 | 416.7453 | |
| 10000 | 398.6259 |
Associated Product
