JAN1N5416US

JAN1N5416US

Part NoJAN1N5416US
ManufacturerMicrochip Technology
DescriptionDIODE GEN PURP 100V 3A AXIAL
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ECAD Module JAN1N5416US
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Specification
PackageBulk
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)100 V
Current-AverageRectified(Io)3A
Voltage-Forward(Vf)(Max)@If1.5 V @ 9 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)150 ns
Current-ReverseLeakage@Vr1 µA @ 100 V
Capacitance@Vr-
FThrough Hole
MountingTypeB, Axial
Package/CaseB, Axial
SupplierDevicePackage-65°C ~ 175°C
OperatingTemperature-JunctionMilitary
GradeMIL-PRF-19500/411
Qualification
In Stock: 4144
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 8.8044
10 8.6283
100 8.3642
1000 8.1
10000 7.7479
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product