JAN1N5417US
Part NoJAN1N5417US
ManufacturerMicrochip Technology
DescriptionDIODE GEN PURP 200V 3A B SQ-MELF
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)200 V
Current-AverageRectified(Io)3A
Voltage-Forward(Vf)(Max)@If1.5 V @ 9 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)150 ns
Current-ReverseLeakage@Vr1 µA @ 200 V
Capacitance@Vr-
FSurface Mount
MountingTypeSQ-MELF, B
Package/CaseB, SQ-MELF
SupplierDevicePackage-65°C ~ 175°C
OperatingTemperature-JunctionMilitary
GradeMIL-PRF-19500/411
Qualification
In Stock:
3169
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.7045 | |
| 10 | 7.5504 | |
| 100 | 7.3193 | |
| 1000 | 7.0881 | |
| 10000 | 6.78 |
Associated Product
