JAN1N5553US

JAN1N5553US

Part NoJAN1N5553US
ManufacturerMicrochip Technology
DescriptionDIODE GEN PURP 800V 3A D-5B
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ECAD Module JAN1N5553US
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Specification
PackageBulk
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)800 V
Current-AverageRectified(Io)3A
Voltage-Forward(Vf)(Max)@If1.3 V @ 9 A
SpeedStandard Recovery >500ns, > 200mA (Io)
ReverseRecoveryTime(trr)1 µA @ 800 V
Current-ReverseLeakage@Vr-
Capacitance@VrMilitary
FMIL-PRF-19500/420
MountingTypeSurface Mount
Package/CaseSQ-MELF, E
SupplierDevicePackageD-5B
OperatingTemperature-Junction-65°C ~ 175°C
Grade2 µs
Qualification
In Stock: 4540
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 9.6126
10 9.4203
100 9.132
1000 8.8436
10000 8.4591
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product