JAN1N5807US

JAN1N5807US

Part NoJAN1N5807US
ManufacturerMicrochip Technology
DescriptionDIODE GEN PURP 50V 6A B SQ-MELF
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ECAD Module JAN1N5807US
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Specification
PackageBulk
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)50 V
Current-AverageRectified(Io)6A
Voltage-Forward(Vf)(Max)@If875 mV @ 4 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)30 ns
Current-ReverseLeakage@Vr5 µA @ 50 V
Capacitance@Vr60pF @ 10V, 1MHz
FSurface Mount
MountingTypeSQ-MELF, B
Package/CaseB, SQ-MELF
SupplierDevicePackage-65°C ~ 175°C
OperatingTemperature-JunctionMilitary
GradeMIL-PRF-19500/477
Qualification
In Stock: 4383
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 6.3163
10 6.19
100 6.0005
1000 5.811
10000 5.5583
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product