JAN1N5811US/TR

JAN1N5811US/TR

Part NoJAN1N5811US/TR
ManufacturerMicrochip Technology
DescriptionDIODE GEN PURP 150V 6A B SQ-MELF
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ECAD Module JAN1N5811US/TR
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)150 V
Current-AverageRectified(Io)6A
Voltage-Forward(Vf)(Max)@If875 mV @ 4 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)30 ns
Current-ReverseLeakage@Vr5 µA @ 150 V
Capacitance@Vr60pF @ 10V, 1MHz
FSurface Mount
MountingTypeSQ-MELF, B
Package/CaseB, SQ-MELF
SupplierDevicePackage-65°C ~ 175°C
OperatingTemperature-JunctionMilitary
GradeMIL-PRF-19500/477
Qualification
In Stock: 4269
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 7.8431
10 7.6862
100 7.4509
1000 7.2157
10000 6.9019
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product