JANS2N3506L
Part NoJANS2N3506L
ManufacturerMicrochip Technology
DescriptionPOWER BJT
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesMilitary, MIL-PRF-19500/349
ProductStatusActive
TransistorTypeNPN
Current-Collector(Ic)(Max)3 A
Voltage-CollectorEmitterBreakdown(Max)40 V
VceSaturation(Max)@Ib1.5V @ 250mA, 2.5A
Ic1µA
Current-CollectorCutoff(Max)50 @ 500mA, 1V
DCCurrentGain(hFE)(Min)@Ic1 W
Vce-
Power-Max-65°C ~ 200°C (TJ)
Frequency-TransitionThrough Hole
OperatingTemperatureTO-205AA, TO-5-3 Metal Can
MountingTypeTO-5AA
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock:
17035
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 68.2104 | |
| 10 | 66.8462 | |
| 100 | 64.7999 | |
| 1000 | 62.7536 | |
| 10000 | 60.0252 |
Associated Product
