MSCSM170HRM11NG
Part NoMSCSM170HRM11NG
ManufacturerMicrochip Technology
DescriptionSIC 4N-CH 1700V/1200V 226A
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration4 N-Channel (Three Level Inverter)
FETFeatureSilicon Carbide (SiC)
DraintoSourceVoltage(Vdss)1700V (1.7kV), 1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C226A (Tc), 163A (Tc)
RdsOn(Max)@Id11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Vgs3.2V @ 10mA, 2.8V @ 6mA
Vgs(th)(Max)@Id712nC @ 20V, 464nC @ 20V
GateCharge(Qg)(Max)@Vgs13200pF @ 1000V, 6040pF @ 1000V
InputCapacitance(Ciss)(Max)@Vds1.012kW (Tc), 662W (Tc)
Power-Max-40°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
Package/Case-
SupplierDevicePackage-
Grade-
Qualification
In Stock:
2744
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 650.8278 | |
| 10 | 637.8112 | |
| 100 | 618.2864 | |
| 1000 | 598.7616 | |
| 10000 | 572.7285 |
Associated Product
