Specification
Collector-Emitter Breakdown Voltage (Vceo)100V
Power Dissipation (Pd)700mW
Collector Current (Ic)4.1A
DC Current Gain (hFE@Ic,Vce)40@4A,2V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)210mV@4.1A,410mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)
In Stock:
15549
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.444 | |
| 10 | 0.435 | |
| 100 | 0.42 | |
| 1000 | 0.41 | |
| 10000 | 0.39 |
Associated Product
