PJS6412_S1_00001

PJS6412_S1_00001

Part NoPJS6412_S1_00001
Description30V N-CHANNEL ENHANCEMENT MODE M
Datasheet Download Now!
ECAD Module PJS6412_S1_00001
Get Quotation Now!
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)23mOhm @ 8A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs4.3 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)392 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-6
SupplierDevicePackageSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3209
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 0.423
10 0.4145
100 0.4018
1000 0.3892
10000 0.3722
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
EPC7014UBC
EPC7014UBC
EPC Space, LLC
GAN FET HEMT 60V 1A COTS 4UB
SUV85N10-10-E3
SUV85N10-10-E3
Vishay Siliconix
MOSFET N-CH 100V 85A TO220AB
US6K4TR
US6K4TR
Rohm Semiconductor
MOSFET 2N-CH 20V 1.5A TUMT6
DMN601VK-7
DMN601VK-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.305A SOT563
HUF76423D3S
HUF76423D3S
onsemi
MOSFET N-CH 60V 20A TO252AA
NVMYS010N04CLTWG
NVMYS010N04CLTWG
onsemi
MOSFET N-CH 40V 14A/38A 4LFPAK
PH5830DLX
PH5830DLX
NXP USA Inc.
PH5830 - N-CHANNEL TRENCHMOS LOG