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R6012FNX
Part NoR6012FNX
ManufacturerRohm Semiconductor
DescriptionMOSFET N-CH 600V 12A TO220FM
Datasheet
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Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)510mOhm @ 6A, 10V
RdsOn(Max)@Id5V @ 1mA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1300 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220FM
GateCharge(Qg)(Max)@VgsTO-220-3 Full Pack
Grade
Qualification
In Stock:
9288
available for immediate sale in a store
available for immediate sale in a store
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