R6507ENXC7G
Part NoR6507ENXC7G
ManufacturerRohm Semiconductor
Description650V 7A TO-220FM, LOW-NOISE POWE
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C7A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)665mOhm @ 2.4A, 10V
RdsOn(Max)@Id4V @ 200µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)390 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature46W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220FM
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2783
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.82 | |
| 10 | 2.7636 | |
| 100 | 2.679 | |
| 1000 | 2.5944 | |
| 10000 | 2.4816 |
Associated Product
