SCT2160KEC
Part NoSCT2160KEC
ManufacturerRohm Semiconductor
DescriptionSICFET N-CH 1200V 22A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)208mOhm @ 7A, 18V
RdsOn(Max)@Id4V @ 2.5mA
Vgs62 nC @ 18 V
Vgs(th)(Max)@Id+22V, -6V
Vgs(Max)1200 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature165W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16186
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available for immediate sale in a store
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Associated Product
