SCT3060ALGC11
Part NoSCT3060ALGC11
ManufacturerRohm Semiconductor
DescriptionSICFET N-CH 650V 39A TO247N
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C39A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)78mOhm @ 13A, 18V
RdsOn(Max)@Id5.6V @ 6.67mA
Vgs58 nC @ 18 V
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)852 pF @ 500 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature165W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247N
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8959
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 15.8224 | |
| 10 | 15.506 | |
| 100 | 15.0313 | |
| 1000 | 14.5566 | |
| 10000 | 13.9237 |
Associated Product
