SEBT818B

SEBT818B

Part NoSEBT818B
ManufacturerSINO-IC
Description-
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ECAD Module SEBT818B
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Specification
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)1.2W
Collector Current (Ic)3A
DC Current Gain (hFE@Ic,Vce)100@500mA,1V
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)210mV@2A,20mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)
In Stock: 7027
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0
10 0.98
100 0.95
1000 0.92
10000 0.88
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product