STI11NM60ND

Part NoSTI11NM60ND

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 10A I2PAK

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Specification

PackageTube

SeriesFDmesh™ II

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)600 V

Current-ContinuousDrain(Id)@25°C10A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)450mOhm @ 5A, 10V

RdsOn(Max)@Id5V @ 250µA

Vgs30 nC @ 10 V

Vgs(th)(Max)@Id±25V

Vgs(Max)850 pF @ 50 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature90W (Tc)

PowerDissipation(Max)150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeI2PAK

SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 6891
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