STP33N60M2
Part NoSTP33N60M2
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 26A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ II Plus
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C26A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)125mOhm @ 13A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs45.5 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)1781 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature190W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19093
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.854 | |
| 10 | 3.7769 | |
| 100 | 3.6613 | |
| 1000 | 3.5457 | |
| 10000 | 3.3915 |
Associated Product
