STP65N150M9
Part NoSTP65N150M9
ManufacturerSTMicroelectronics
DescriptionN-CHANNEL 650 V, 128 MOHM TYP.
Datasheet
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ECAD Module
Specification
Package1
SeriesTube
ProductStatus-
FETTypeActive
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C650 V
DriveVoltage(MaxRdsOn20A (Tc)
MinRdsOn)10V
RdsOn(Max)@Id150mOhm @ 10A, 10V
Vgs4.2V @ 250µA
Vgs(th)(Max)@Id32 nC @ 10 V
Vgs(Max)±30V
InputCapacitance(Ciss)(Max)@Vds1239 pF @ 400 V
FETFeature-
PowerDissipation(Max)140W (Tc)
OperatingTemperature150°C (TJ)
MountingTypeThrough Hole
SupplierDevicePackageTO-220
Package/CaseTO-220-3
GateCharge(Qg)(Max)@Vgs-
Grade-
Qualification
In Stock:
3623
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 477.36 | |
| 10 | 467.8128 | |
| 100 | 453.492 | |
| 1000 | 439.1712 | |
| 10000 | 420.0768 |
Associated Product
