STU8NM60ND

STU8NM60ND

Part NoSTU8NM60ND
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 7A IPAK
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ECAD Module STU8NM60ND
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Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageI-PAK
SeriesFDmesh™ II
Rds On (Max) @ Id, Vgs700 mOhm @ 3.5A, 10V
Power Dissipation (Max)70W (Tc)
PackagingTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds560pF @ 50V
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 7A (Tc) 70W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C7A (Tc)
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Shipping Information
Shiped FromShenZhen Warehourse
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