Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)400mW
Collector Current (Ic)150mA
DC Current Gain (hFE@Ic,Vce)200@2mA,6V
Transition Frequency (fT)80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@100mA,10mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
7008
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.0052 | |
| 10 | 0.0051 | |
| 100 | 0.005 | |
| 1000 | 0.0048 | |
| 10000 | 0.0046 |
Associated Product
