TIM1314-30L
Part NoTIM1314-30L
ManufacturerTOSHIBA
DescriptionTRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 7-AA03A, 3 PIN, FET RF Power
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
PackagingBulk
Number of Pins3
Radiation HardeningNo
Element ConfigurationSingle
Max Operating Temperature175 °C
Min Operating Temperature-65 °C
Gate to Source Voltage (Vgs)-5 V
Continuous Drain Current (ID)20 A
In Stock:
6236
available for immediate sale in a store
available for immediate sale in a store
Pricing
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Associated Product
IPI052NE7N3G
INFINEON
Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
MK40DN512VMD10
NXP Semiconductors
MCU 32-bit K40 ARM Cortex M4 RISC 512KB Flash 1.8V/2.5V/3.3V 144-Pin MAP-BGA Tray
NXP Semiconductors
MCU 32-bit K40 ARM Cortex M4 RISC 512KB Flash 1.8V/2.5V/3.3V 144-Pin MAP-BGA Tray
