TSM9926DCS

Part NoTSM9926DCS

ManufacturerTaiwan Semiconductor

DescriptionTransistor

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ECAD Module

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Specification

RoHSCompliant

Test Current2.5 mA

Zener Voltage75 V

Forward Voltage1 V

Clamping Voltage70.1 V

Lifecycle StatusProduction (Last Updated: 2 years ago)

Breakdown Voltage51 V

Input Capacitance562 pF

Peak Pulse Power 1.5 kW

Power Dissipation200 mW

Number of Channels2

Peak Pulse Current21.4 A

Max Breakdown Voltage9.8 V

Min Breakdown Voltage25.4 V

Reverse Recovery Time50 ns

Reverse Standoff Voltage24 V

Max Reverse Leakage Current1 µA

Gate to Source Voltage (Vgs)850 mV

Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 years ago)

Max Junction Temperature (Tj)150 °C

Drain to Source Voltage (Vdss)20 V

Max Forward Surge Current (Ifsm)2.5 A

Max Repetitive Reverse Voltage (Vrrm)250 V

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