TP44110HB
Part NoTP44110HB
ManufacturerTagore Technology
DescriptionGANFET 2N-CH 650V 30QFN
Datasheet
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ECAD Module
Specification
PackageTray
Series-
ProductStatusActive
TechnologyGaNFET (Gallium Nitride)
Configuration2 N-Channel (Half Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)650V
Current-ContinuousDrain(Id)@25°C19A (Tc)
RdsOn(Max)@Id118mOhm @ 500mA, 6V
Vgs2.5V @ 11mA
Vgs(th)(Max)@Id3nC @ 6V
GateCharge(Qg)(Max)@Vgs110pF @ 400V
InputCapacitance(Ciss)(Max)@Vds-
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType30-PowerWFQFN
Package/Case30-QFN (8x10)
SupplierDevicePackage-
Grade-
Qualification
In Stock:
14918
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.3296 | |
| 10 | 6.203 | |
| 100 | 6.0131 | |
| 1000 | 5.8232 | |
| 10000 | 5.57 |
Associated Product
