![TSM4NB60CI C0G](/media/Discrete%20Semiconductor%20Products/Transistors/Taiwan-TO-220-3FP.jpg)
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TSM4NB60CI C0G
Part NoTSM4NB60CI C0G
ManufacturerTaiwan Semiconductor Corporation
DescriptionMOSFET N-CH 600V 4A ITO220AB
Datasheet
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 2A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs14.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeITO-220AB
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4978
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.4929 | |
10 | 0.483 | |
100 | 0.4683 | |
1000 | 0.4535 | |
10000 | 0.4338 |