TSM60N900CH C5G

Part NoTSM60N900CH C5G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CH 600V 4.5A TO251

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusNot For New Designs

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)600 V

Current-ContinuousDrain(Id)@25°C4.5A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)900mOhm @ 2.3A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs9.7 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)480 pF @ 100 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature50W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeTO-251 (IPAK)

SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

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