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TSM80N1R2CH
Part NoTSM80N1R2CH
ManufacturerTaiwan Semiconductor Corporation
Description800V, 5.5A, SINGLE N-CHANNEL POW
Datasheet
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C5.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.2Ohm @ 2.75A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs19.4 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)685 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3403
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.3424 | |
10 | 2.2956 | |
100 | 2.2253 | |
1000 | 2.155 | |
10000 | 2.0613 |