![RN1117MFV,L3F](/media/Discrete%20Semiconductor%20Products/Transistors/VESM.jpg)
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RN1117MFV,L3F
Part NoRN1117MFV,L3F
ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS PREBIAS NPN 50V 0.1A VESM
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
TransistorTypeNPN - Pre-Biased
Current-Collector(Ic)(Max)100 mA
Voltage-CollectorEmitterBreakdown(Max)50 V
Resistor-Base(R1)10 kOhms
Resistor-EmitterBase(R2)4.7 kOhms
DCCurrentGain(hFE)(Min)@Ic30 @ 10mA, 5V
Vce300mV @ 500µA, 5mA
VceSaturation(Max)@Ib500nA
Ic150 mW
Current-CollectorCutoff(Max)Surface Mount
Power-MaxSOT-723
MountingTypeVESM
Package/Case250 MHz
SupplierDevicePackage-
Frequency-Transition-
Grade
Qualification
In Stock:
4015
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.1377 | |
10 | 0.1349 | |
100 | 0.1308 | |
1000 | 0.1267 | |
10000 | 0.1212 |