TK11A65W,S5X
Part NoTK11A65W,S5X
ManufacturerToshiba Semiconductor and Storage
DescriptionMOSFET N-CH 650V 11.1A TO220SIS
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C11.1A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)390mOhm @ 5.5A, 10V
RdsOn(Max)@Id3.5V @ 450µA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)890 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4296
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4847 | |
| 10 | 1.455 | |
| 100 | 1.4105 | |
| 1000 | 1.3659 | |
| 10000 | 1.3065 |
Associated Product
