TK14E65W,S1X
Part NoTK14E65W,S1X
ManufacturerToshiba Semiconductor and Storage
DescriptionMOSFET N-CH 650V 13.7A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C13.7A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)250mOhm @ 6.9A, 10V
RdsOn(Max)@Id3.5V @ 690µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1300 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature130W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4060
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.4735 | |
| 10 | 2.424 | |
| 100 | 2.3498 | |
| 1000 | 2.2756 | |
| 10000 | 2.1767 |
Associated Product
