TK16J60W5,S1VQ
Part NoTK16J60W5,S1VQ
ManufacturerToshiba Semiconductor and Storage
DescriptionX35 PB-F POWER MOSFET TRANSISTOR
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C15.8A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)230mOhm @ 7.9A, 10V
RdsOn(Max)@Id4.5V @ 790µA
Vgs43 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1350 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature130W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-3P(N)
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4599
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.012 | |
| 10 | 5.8918 | |
| 100 | 5.7114 | |
| 1000 | 5.531 | |
| 10000 | 5.2906 |
Associated Product
