TK31V60W,LVQ
Part NoTK31V60W,LVQ
ManufacturerToshiba Semiconductor and Storage
DescriptionMOSFET N-CH 600V 30.8A 4DFN
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C30.8A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)98mOhm @ 15.4A, 10V
RdsOn(Max)@Id3.7V @ 1.5mA
Vgs86 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds240W (Tc)
FETFeature150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature4-DFN-EP (8x8)
MountingType4-VSFN Exposed Pad
SupplierDevicePackage3000 pF @ 300 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5405
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 9.7776 | |
10 | 9.582 | |
100 | 9.2887 | |
1000 | 8.9954 | |
10000 | 8.6043 |