TK4A60DB(STA4,Q,M)
Part NoTK4A60DB(STA4,Q,M)
ManufacturerToshiba Semiconductor and Storage
DescriptionMOSFET N-CH 600V 3.7A TO220SIS
Datasheet
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ECAD Module
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Specification
PackageTube
Seriesπ-MOSVII
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C3.7A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2Ohm @ 1.9A, 10V
RdsOn(Max)@Id4.4V @ 1mA
Vgs11 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)540 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
2950
available for immediate sale in a store
available for immediate sale in a store
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Associated Product
